SweGaN Embarks on 6G GaN Power Amplifier Project with Ericsson, Saab, and Chalmers
ByAinvest
Thursday, Aug 28, 2025 10:31 am ET1min read
ERIC--
SweGaN, a Swedish manufacturer of gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers, is coordinating a project with Ericsson, Saab, and Chalmers University of Technology to develop high-efficiency power amplifiers for 6G networks. The project aims to revolutionize GaN-based power amplifier technology for next-generation 6G applications, targeting the 7-15GHz frequency range. SweGaN's proprietary QuanFINE epitaxial GaN-on-SiC solutions will be used to develop high-efficiency PA circuits that support energy-efficient, high-capacity wireless systems.
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