Chinese Researchers Develop Graphene Films with 1754% Thermal Conductivity

Researchers from the Shanghai Institute of Microsystems, part of the Chinese Academy of Sciences, have achieved a significant breakthrough in the development of bidirectional high thermal conductivity graphene films. Collaborating with a team from Ningbo University, the researchers published their findings in the journal Advanced Functional Materials. The study introduces a novel method using aromatic polyamide films as precursors to produce low-defect, large-grained, and highly oriented graphene films through high-temperature graphitization.

The resulting films exhibit remarkable thermal conductivity properties. At a thickness of 40 micrometers, the in-plane thermal conductivity (Kin) reaches 1754 W/m·K, while the out-of-plane thermal conductivity (Kout) exceeds 14.2 W/m·K. These values represent a substantial improvement over traditional thermal films, which typically have lower thermal conductivities and higher defect rates. The research highlights the unique advantages of using aromatic polyamide precursors, demonstrating that nitrogen doping and low-oxygen content precursors can enhance the crystallinity and bidirectional thermal conductivity of the graphene films.

This breakthrough in thermal conductivity is expected to provide critical material and technological support for the thermal management of high-power devices such as 5G chips and power semiconductors. In practical applications, the use of these bidirectional high thermal conductivity graphene films has shown promising results. In a simulation of smartphone cooling, chips equipped with these films reduced their maximum surface temperature from 52°C to 45°C. In high-power chip cooling scenarios with a heat flux density of 2000 W/cm², the films reduced the surface temperature difference from 50°C to 9°C, achieving rapid temperature uniformity.

These findings underscore the potential of this technology to address the thermal management challenges faced by modern high-performance electronic devices. As the demand for 5G technology and power semiconductors continues to grow, the need for efficient thermal management solutions becomes increasingly critical. This breakthrough offers a promising avenue for improving the performance and reliability of these devices, paving the way for future advancements in the electronics industry. The development of these graphene films is a significant step forward in the field of thermal management for high-power electronics, providing a robust solution to the thermal challenges posed by advanced electronic components.