Atomera's GaN-on-Silicon Technology Advances to Proposal Phase in Funding Program

Atomera's GaN-on-Silicon concept has been accepted to move to the proposal stage in the PowerAmerica Institute Initiated Proposal to advance wide-bandgap power semiconductor technology. The project aims to improve GaN material quality and manufacturing processes with higher wafer-level yield and device-level performance for power electronics. If approved, the project would receive funding and enable Atomera to further refine and scale GaN-on-Si manufacturing with Mears Silicon Technology.