ASML Shares Climb 1.5% as SK hynix Partnership Unveils Pioneering High-NA EUV System Despite 80th-Ranked Trading Volume

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Wednesday, Sep 3, 2025 9:07 pm ET1min read
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- ASML shares rose 1.51% on Sept 3, 2025, amid a 27.55% drop in trading volume, as the company and SK hynix unveiled the first High-NA EUV system.

- The Twinscan NXE:5200B, with a 0.55 NA lens and 8nm resolution, enables higher transistor density and reduces costly multi-patterning steps.

- The system will support next-gen DRAM prototyping and aims to transition to mass production by the 2030s, advancing AI-driven memory innovation.

- SK hynix’s adoption of the tool positions it ahead of rivals using older EUV tech, with ASML emphasizing collaboration to drive industry advancements.

ASML shares rose 1.51% on September 3, 2025, with a trading volume of $0.98 billion, representing a 27.55% decline from the previous day’s volume. The stock ranked 80th in trading activity across the market.

ASML and SK hynix announced the assembly of the industry’s first Twinscan NXE:5200B High-NA EUV lithography system at SK hynix’s M16 fab in South Korea. The system, featuring a 0.55 numerical aperture lens, achieves an 8nm resolution—1.7 times smaller than existing Low-NA EUV tools. This advancement enables higher transistor density and streamlined manufacturing processes, reducing the need for costly multi-patterning techniques. The system will initially support next-generation DRAM prototyping and eventually transition to high-volume production by the 2030s.

ASML emphasized the strategic significance of this milestone, highlighting the system’s role in accelerating R&D for AI-driven memory solutions. The collaboration positions SK hynix ahead of competitors like

and Samsung, which still rely on older EUV technology. ASML’s prior pre-production High-NA systems at Intel’s D1X fab have already produced tens of thousands of wafers, demonstrating the technology’s scalability. The deployment of the NXE:5200B at a mass-production site marks a critical step toward mainstream adoption of High-NA EUV in the semiconductor industry.

SK hynix plans to leverage the tool for rapid prototyping of DRAM structures, including capacitor trenches and bitlines, to fast-track node development. The system’s ability to simplify EUV process flows is expected to enhance cost efficiency as the technology matures. ASML’s customer team reiterated its commitment to partnering with SK hynix to drive next-generation memory innovation, aligning with broader industry trends toward advanced lithography for AI and computing applications.

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