Navitas Unveils Fifth-Generation SiC Trench-Assisted Planar MOSFET Technology for AI Data Centers, Grid, and Energy Infrastructure

Navitas Semiconductor has unveiled its 5th-generation GeneSiC technology platform, featuring a High Voltage (HV) SiC Trench-Assisted Planar (TAP) MOSFET technology that delivers a 1200V line of MOSFETs. The technology platform offers a 35% improved RDS,ON x QGD figure of merit, significantly slashing switching losses and allowing for cooler operation and higher frequency of operation in demanding power stages. The 5th-generation technology also provides a ~25% improvement to the QGD/QGS ratio and immunity against parasitic turn-on, ensuring robust and predictable gate drive even in high-noise environments.