Navitas Semiconductor Unveils GaN, SiC Breakthroughs at APEC 2025

Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation power semiconductor technologies, is set to showcase its latest advancements in gallium nitride (GaN) and silicon carbide (SiC) at the Applied Power Electronics Conference (APEC) 2025. The event, taking place from March 16th to 20th in Atlanta, Georgia, will provide an ideal platform for Navitas to highlight its cutting-edge solutions for AI data centers, electric vehicles (EVs), and mobile devices.

Navitas' strategic focus on GaN and SiC technologies positions the company at the forefront of the competitive landscape in the power semiconductor industry. By specializing in these wide bandgap materials, Navitas offers power electronic components with smaller size, faster switching speed, greater reliability, and higher efficiency compared to their silicon-based counterparts. This focus enables Navitas to target high-growth markets that demand the highest efficiency and power density.

At APEC 2025, Navitas will unveil a new paradigm in power conversion, which is set to revolutionize the power electronics industry. The company will also showcase its latest breakthroughs in GaN and SiC technologies, including:

1. World's First 8.5 kW AI Data Center Power Supply: Navitas will demonstrate an 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. This high-efficiency, high-performance, and low-component-count solution features high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies.
2. World's Highest Power Density AI Power Supply: Navitas will showcase an efficient 4.5 kW power supply in the smallest power-supply form factor for the latest AI GPUs. This optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs, enabling the world's highest power density with 137 W/in³ and over 97% efficiency.
3. 'IntelliWeave' Patented Digital Control: Combined with high-power GaNSafe™ and Gen-3 'Fast' SiC MOSFETs, Navitas' 'IntelliWeave' patented digital control enables PFC peak efficiencies of 99.3% and reduces power losses by 30% compared to existing solutions.
4. Mid-voltage GaNFast FETs: Targeting 48V AI data center power supplies, next-generation EV platforms, and AI-based robotics, these FETs enable high-frequency, high-efficiency, and high-power density power conversion systems.
5. GaNSlim™: A new generation of highly integrated GaN power ICs, GaNSlim™ offers the highest level of integration and thermal performance, further simplifying and speeding the development of small form factor, high-power-density applications.
6. Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs: With 'trench-assisted planar' technology, these MOSFETs provide world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
7. SiCPAK™ High-Power Modules: Utilizing industry-leading 'trench-assisted planar'-gate technology and epoxy-resin potting, SiCPAK modules offer compact form factors and provide cost-effective, power-dense solutions for applications including EV charging, drives, solar, and energy storage systems.

Navitas will also participate in technical presentations and industry sessions at APEC 2025, sharing its expertise in wide bandgap technologies and power conversion. The company's booth (#1107) will serve as a hub for visitors to learn about Navitas' mission to 'Electrify our World™' by advancing the transition from legacy silicon to next-generation, clean energy GaN and SiC power semiconductors.

Navitas Semiconductor's strategic focus on GaN and SiC technologies, combined with its commitment to sustainability and innovation, positions the company as a strong competitor in the power semiconductor industry. By attending APEC 2025, visitors will have the opportunity to witness firsthand the latest advancements in power conversion and learn how Navitas is driving the future of clean energy and efficient power electronics.