Navitas Releases 3300V and 2300V UHV SiC Products with Enhanced Performance and Reliability

Navitas Semiconductor has announced the sample availability of its new 3300V and 2300V ultrahigh-voltage silicon carbide power semiconductors. The products are based on Navitas' fourth-generation GeneSiC platform and feature a Trench-Assisted Planar architecture for improved reliability and performance. The devices are available in power module, discrete, and known good die formats and are suitable for grid and energy infrastructure applications.