Navitas Powers Xiaomi's Next-Gen GaN Charger with Revolutionary 90W Charger.
PorAinvest
viernes, 1 de agosto de 2025, 9:00 pm ET1 min de lectura
NVTS--
The charger integrates Navitas' NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control ICs combine fourth-generation GaN power with high-frequency control functionality, delivering a monolithic integration of GaN power FET, GaN driver, controller, and protection features in a single surface-mount package [1][2][3]. This integration not only reduces component count but also enhances system efficiency, making it a benchmark for high-density, high-efficiency chargers [1][2][3].
Navitas' GaNSense Control ICs are designed to operate at the highest frequencies, minimizing system size and weight. They feature advanced protection capabilities, including lossless current sensing, high-voltage start-up, and the elimination of the VDD inductor, which further boosts efficiency [1][2][3]. The ICs can withstand transient voltages up to 800V without generating PCB hotspots, setting a new benchmark for performance and miniaturization in next-gen power electronics [1][2][3].
Charles Zha, Senior VP and APAC General Manager at Navitas, emphasized the significance of this collaboration, stating, "The launch of Xiaomi's 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi. Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology" [3].
This partnership underscores Navitas' strategic position in the GaN power market and reinforces its position as a frontrunner in fast-charging solutions. With over 300 patents issued or pending, Navitas continues to innovate and set industry standards in power semiconductors, making it a compelling investment opportunity for financial professionals.
References:
[1] https://www.semiconductor-today.com/news_items/2025/aug/navitas-010825.shtml
[2] https://www.powerelectronicsnews.com/xiaomi-taps-navitas-gansense-control-ics-for-ultra-compact-90w-gan-charger/
[3] https://www.globenewswire.com/news-release/2025/07/31/3125393/0/en/Navitas-Powers-Xiaomi-s-Next-Generation-GaN-Charger.html
Navitas Semiconductor's GaNSense Control ICs power Xiaomi's new 90W GaN charger, setting industry benchmarks for size and weight. The charger is 50% smaller and 67% lighter than traditional GaN chargers and features advanced protection up to 800V. This partnership highlights Navitas' strategic position in the GaN power market and reinforces its position as a frontrunner in fast-charging solutions.
Navitas Semiconductor has made significant strides in the power semiconductor market with its latest collaboration with Xiaomi. Navitas' GaNSense Control ICs are set to power Xiaomi's new 90W GaN charger, marking a significant milestone in ultra-portable fast-charging technology. The charger, touted as the world's smallest in its class, measures 34mm x 45mm x 34mm and weighs only 65 grams, making it approximately 50% smaller and 67% lighter than traditional GaN chargers [1][2][3].The charger integrates Navitas' NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control ICs combine fourth-generation GaN power with high-frequency control functionality, delivering a monolithic integration of GaN power FET, GaN driver, controller, and protection features in a single surface-mount package [1][2][3]. This integration not only reduces component count but also enhances system efficiency, making it a benchmark for high-density, high-efficiency chargers [1][2][3].
Navitas' GaNSense Control ICs are designed to operate at the highest frequencies, minimizing system size and weight. They feature advanced protection capabilities, including lossless current sensing, high-voltage start-up, and the elimination of the VDD inductor, which further boosts efficiency [1][2][3]. The ICs can withstand transient voltages up to 800V without generating PCB hotspots, setting a new benchmark for performance and miniaturization in next-gen power electronics [1][2][3].
Charles Zha, Senior VP and APAC General Manager at Navitas, emphasized the significance of this collaboration, stating, "The launch of Xiaomi's 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi. Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology" [3].
This partnership underscores Navitas' strategic position in the GaN power market and reinforces its position as a frontrunner in fast-charging solutions. With over 300 patents issued or pending, Navitas continues to innovate and set industry standards in power semiconductors, making it a compelling investment opportunity for financial professionals.
References:
[1] https://www.semiconductor-today.com/news_items/2025/aug/navitas-010825.shtml
[2] https://www.powerelectronicsnews.com/xiaomi-taps-navitas-gansense-control-ics-for-ultra-compact-90w-gan-charger/
[3] https://www.globenewswire.com/news-release/2025/07/31/3125393/0/en/Navitas-Powers-Xiaomi-s-Next-Generation-GaN-Charger.html

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