Guerrilla RF Unveils High-Performance GaN Dice for Growing RF Market
Generado por agente de IACyrus Cole
jueves, 16 de enero de 2025, 8:13 am ET1 min de lectura
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Guerrilla RF, Inc. (OTCQX: GUER) has recently launched the GRF0020D and GRF0030D, its first GaN on SiC HEMT power amplifiers, targeting the burgeoning RF GaN device market. These unmatched discrete transistors cater to wireless infrastructure, military, aerospace, and industrial heating markets, offering up to 50W of saturated power and exceptional flexibility. The company's strategic move aligns with market projections, positioning Guerrilla RF to capitalize on the growing demand for high-performance RF devices.

The GRF0020D and GRF0030D devices provide up to 30W and 50W of saturated power, respectively, supporting frequencies up to 7GHz and 6GHz, with gain ranging from 13.8dB to 24.3dB and 13.5dB to 23.7dB. These devices are 100% DC production tested for KGD compliance, ensuring high-quality and reliable performance. The pricing starts at $30 for 100-piece quantities, making these GaN dice an attractive option for customers seeking high-performance, energy-efficient RF systems and devices.
According to market research from Yole Group, the RF GaN device market is projected to grow from $1.3B in 2022 to $2.7B by 2028, driven by expansion in key segments relevant to Guerrilla RF. These segments include telecom infrastructure (5G and point-to-point systems), military, and satellite communications, with projected compound annual growth rates of 10%, 13%, and 18%, respectively. Additionally, GaN on SiC variants are expected to dominate the market for the next decade, further bolstering Guerrilla RF's competitive position.
Ryan Pratt, CEO and founder of Guerrilla RF, commented on the launch, "GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We're already seeing strong demand for the GRF0020D and GRF0030D." He added, "Another advantage is that these devices are fabricated in the U.S., aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers."
Guerrilla RF's new GaN dice offer a compelling combination of high performance, flexibility, and competitive pricing, positioning the company to capture a significant share of the growing RF GaN device market. As the demand for high-performance RF devices continues to rise, driven by the expansion of 5G networks, military communications, and other applications, Guerrilla RF is well-positioned to capitalize on this trend and deliver value to its customers and shareholders.
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Guerrilla RF, Inc. (OTCQX: GUER) has recently launched the GRF0020D and GRF0030D, its first GaN on SiC HEMT power amplifiers, targeting the burgeoning RF GaN device market. These unmatched discrete transistors cater to wireless infrastructure, military, aerospace, and industrial heating markets, offering up to 50W of saturated power and exceptional flexibility. The company's strategic move aligns with market projections, positioning Guerrilla RF to capitalize on the growing demand for high-performance RF devices.

The GRF0020D and GRF0030D devices provide up to 30W and 50W of saturated power, respectively, supporting frequencies up to 7GHz and 6GHz, with gain ranging from 13.8dB to 24.3dB and 13.5dB to 23.7dB. These devices are 100% DC production tested for KGD compliance, ensuring high-quality and reliable performance. The pricing starts at $30 for 100-piece quantities, making these GaN dice an attractive option for customers seeking high-performance, energy-efficient RF systems and devices.
According to market research from Yole Group, the RF GaN device market is projected to grow from $1.3B in 2022 to $2.7B by 2028, driven by expansion in key segments relevant to Guerrilla RF. These segments include telecom infrastructure (5G and point-to-point systems), military, and satellite communications, with projected compound annual growth rates of 10%, 13%, and 18%, respectively. Additionally, GaN on SiC variants are expected to dominate the market for the next decade, further bolstering Guerrilla RF's competitive position.
Ryan Pratt, CEO and founder of Guerrilla RF, commented on the launch, "GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We're already seeing strong demand for the GRF0020D and GRF0030D." He added, "Another advantage is that these devices are fabricated in the U.S., aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers."
Guerrilla RF's new GaN dice offer a compelling combination of high performance, flexibility, and competitive pricing, positioning the company to capture a significant share of the growing RF GaN device market. As the demand for high-performance RF devices continues to rise, driven by the expansion of 5G networks, military communications, and other applications, Guerrilla RF is well-positioned to capitalize on this trend and deliver value to its customers and shareholders.
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