Atomera Advances GaN-on-Silicon Concept to Proposal Phase in Funding Program

Atomera's GaN-on-Silicon concept has been accepted to move to the proposal stage for funding from PowerAmerica Institute. The concept proposes collaboration with industry and scientific partners to improve GaN material quality using Atomera's Mears Silicon Technology (MST). The goal is to increase wafer-level yield and device-level performance for power electronics. Atomera aims to improve the efficiency and adoption of GaN technology.